ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,511, issued on Dec. 23, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Hongtang Town, China).
"Light-emitting diode chip" was invented by Ling-Yuan Hong (Xiamen, China), Xiaoliang Liu (Xiamen, China), Qing Wang (Xiamen, China), Minyou He (Xiamen, China) and Chung-Ying Chang (Xiamen, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode chip includes a light-emitting unit, a first electrode, an insulating layer, and a second electrode. The first electrode is disposed on the light-emitting unit. The insulating layer is disposed on the first electrode and the light-emitting unit, and has a through hole and a hole-defining...