ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,719, issued on Aug. 12, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Xiamen, China).
"Light emitting diode device" was invented by Huining Wang (Xiamen, China), Linhua Cao (Xiamen, China), Hongwei Xia (Xiamen, China), Chunlan He (Xiamen, China), Lili Jiang (Xiamen, China), Su-Hui Lin (Xiamen, China), Renlong Yang (Xiamen, China) and Chung-Ying Chang (Xiamen, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "An LED device includes an epitaxial layered structure that includes a first semiconductor layer, a light emitting layer and a second semiconductor layer, first and second electrodes that are disposed on the epitaxial layered structu...