US Patent Issued to XI'AN JIAOTONG-LIVERPOOL UNIVERSITY on April 15 for "Friction nano power generation synaptic transistor" (Chinese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,573, issued on April 15, was assigned to XI'AN JIAOTONG-LIVERPOOL UNIVERSITY (Suzhou, China).

"Friction nano power generation synaptic transistor" was invented by Qihan Liu (Jiangsu, China), Chun Zhao (Jiangsu, China), Cezhou Zhao (Jiangsu, China), Yina Liu (Jiangsu, China) and Li Yang (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a friction nano power generation synaptic transistor. The friction nano power generation synaptic transistor includes a friction nano generator, a synaptic transistor, a substrate, an electrode layer formed on the substrate, a shared intermediate layer formed on the electrode layer; a synaptic t...