US Patent Issued to XI'AN ESWIN MATERIAL TECHNOLOGY on May 6 for "Method for growing single-crystal silicon ingots and single-crystal silicon ingots" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,291,796, issued on May 6, was assigned to XI'AN ESWIN MATERIAL TECHNOLOGY Co. LTD. (Xi'an, China).

"Method for growing single-crystal silicon ingots and single-crystal silicon ingots" was invented by Zhenliang Song (Xi'an, China) and Shaojie Song (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for growing a single-crystal silicon ingot and a single-crystal silicon ingot includes, during an initial stage of body growing process of the single-crystal silicon ingot, controlling an initial height of a horizontal magnetic field to be higher than a free surface of silicon melt. The method further includes, during the body growing process...