US Patent Issued to XI'AN ESWIN MATERIAL TECHNOLOGY on Dec. 2 for "Acquisition equipment and method for acquiring nitrogen-doped silicon melt and manufacturing system of nitrogen-doped monocrystalline silicon" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,486,591, issued on Dec. 2, was assigned to XI'AN ESWIN MATERIAL TECHNOLOGY Co. LTD. (Xi'an, China).

"Acquisition equipment and method for acquiring nitrogen-doped silicon melt and manufacturing system of nitrogen-doped monocrystalline silicon" was invented by Yang Li (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure disclose an acquisition equipment and a method for acquiring a nitrogen-doped silicon melt, and a system for manufacturing a nitrogen-doped monocrystalline silicon. The acquisition equipment comprises: a granulation apparatus, which is configured to prepare a plurality of polysilicon particles ...