US Patent Issued to XI'AN ESWIN MATERIAL TECHNOLOGY on Aug. 12 for "Processing method and system for reducing warp of nitrogen-doped wafer" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,384,075, issued on Aug. 12, was assigned to XI'AN ESWIN MATERIAL TECHNOLOGY Co. LTD. (Xi'an, China).

"Processing method and system for reducing warp of nitrogen-doped wafer" was invented by Na Yi (Xi'an, China), Rongkai Linghu (Xi'an, China), Wen Zhang (Xi'an, China) and Ying Lu (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A processing method for reducing warp of a nitrogen-doped wafer includes dividing a to-be-cut nitrogen-doped crystal ingot into a plurality of to-be-processed crystal ingot segments according to nitrogen content distribution, where each to-be-processed ingot segment corresponds to a nitrogen content range. The method f...