US Patent Issued to XI'AN ESWIN MATERIAL TECHNOLOGY, XI'AN ESWIN SILICON WAFER TECHNOLOGY on March 18 for "Single crystal pulling apparatus hot-zone structure, single crystal pulling apparatus and crystal ingot" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,805, issued on March 18, was assigned to XI'AN ESWIN MATERIAL TECHNOLOGY Co. LTD. (Xi'an, China) and XI'AN ESWIN SILICON WAFER TECHNOLOGY Co. LTD. (Xi'an, China).

"Single crystal pulling apparatus hot-zone structure, single crystal pulling apparatus and crystal ingot" was invented by Qinhu Mao (Xi'an, China), Bokcheol Sim (Xi'an, China) and Jinkun Kim (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a single crystal pulling apparatus Hot-Zone structure, a single crystal pulling apparatus and a crystal ingot. The single crystal pulling apparatus Hot-Zone structure is applied to a single crystal pulling app...