US Patent Issued to XI'AN ESWIN MATERIAL TECHNOLOGY, XI'AN ESWIN SILICON WAFER TECHNOLOGY on Dec. 2 for "Heater in hot-zone of single crystal pulling apparatus and single crystal pulling apparatus" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,486,592, issued on Dec. 2, was assigned to XI'AN ESWIN MATERIAL TECHNOLOGY Co. LTD. (Xi'an, China) and XI'AN ESWIN SILICON WAFER TECHNOLOGY Co. LTD. (Xi'an, China).

"Heater in hot-zone of single crystal pulling apparatus and single crystal pulling apparatus" was invented by Wenwu Yang (Xi'an, China) and Bokcheol Sim (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a heater in a Hot-Zone of a single crystal pulling apparatus and a single crystal pulling apparatus. The heater in the Hot-Zone of the single crystal pulling apparatus includes a side-main heater and an auxiliary heater. Each of the side-main heater ...