ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,474,838, issued on Nov. 18, was assigned to XC MEMORY Co. LTD (Zhuhai, China).
"Memory with redundant replacement resources and electronic device" was invented by Hong Hu (Beijing) and Yu Du (Beijing).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory and an electronic device are provided in the present application. The memory includes a bank. The bank includes two planes. Each of the two planes includes a plurality of memory resources and a plurality of redundant replacement resources. A bad memory resource of one of the two planes is capable of being replaced by the redundant replacement resource of the other of the two planes for performing a nor...