US Patent Issued to XC MEMORY on Feb. 3 for "Redundancy latch decoder circuit and memory" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,541,441, issued on Feb. 3, was assigned to XC MEMORY Co. LTD. (Zhuhai, China).

"Redundancy latch decoder circuit and memory" was invented by Hong Hu (Beijing) and Yizhe Yang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A redundancy latch decoder circuit is provided and includes: a redundancy latch circuit, including multiple redundancy latch sections corresponding to multiple memory sections of the memory, wherein each redundancy latch section includes at least one normal redundancy latch unit, at least a portion of the redundancy latch sections is configured into at least one redundancy latch sharing group, each redundancy latch sharing group...