ALEXANDRIA, Va., June 19 -- United States Patent no. 12,331,426, issued on June 17, was assigned to X-FAB SEMICONDUCTOR FOUNDRIES GMBH (Erfurt, Germany).
"Substrates for III-nitride epitaxy" was invented by Victor Sizov (Dresden, Germany), Karl-Heinz Stegemann (Dresden, Germany), Ronny Mueller-Biedermann (Dresden, Germany) and Thomas Lindner (Dresden, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A wafer suitable for epitaxial growth of gallium nitride (GaN) in a Metal Oxide Chemical Vapor Deposition (MOCVD) process. The wafer includes a silicon substrate having a front side and a back side and an edge extending between the front side and the back side, the edge including a front bevel surface conne...