ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,933, issued on Dec. 30, was assigned to X-FAB France SAS (Corbeil-Essonnes, France).
"Transfer printing for RF applications" was invented by Jerome Loraine (Corbeil-Essonnes, France), Imene Lahbib (Corbeil-Essonnes, France), Frederic Drillet (Corbeil-Essonnes, France), Brice Grandchamp (Corbeil-Essonnes, France), Lucas Iogna-Prat (Corbeil-Essonnes, France) and Gregory U'Ren (Corbeil-Essonnes, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure for RF applications comprises: a target substrate;a micro-transfer printed (MuTP) gallium nitride (GaN) chiplet on said target substrate, wherein said chiplet comprises a GaN device...