US Patent Issued to Wuxi Smart Memories Technologies on Sept. 23 for "Ferroelectric memory reference generation" (California Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,258, issued on Sept. 23, was assigned to Wuxi Smart Memories Technologies Co. Ltd. (Wuxi, China).

"Ferroelectric memory reference generation" was invented by Feng Pan (Freemont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A FRAM memory device can include a plurality of FRAM memory cells, each FRAM memory cell including one transistor and one capacitor electric-ally coupled to the at least one transistor. The capacitor can be configured to store a bit of data. The memory device can also include a local bit-line configured to carry data to be written to the plurality of memory cells. The memory device can further include a global bit-line c...