US Patent Issued to WUXI SMART MEMORIES TECHNOLOGIES on March 25 for "Signal lines in memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,112, issued on March 25, was assigned to WUXI SMART MEMORIES TECHNOLOGIES Co. LTD. (Wuxi, China).

"Signal lines in memory devices and methods for forming the same" was invented by Meilan Guo (Wuxi, China), Yushi Hu (Wuxi, China), Ke Ma (Wuxi, China), Jia Sun (Wuxi, China) and Yu Long (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bit line group having a first bit line and a second bit line. The bit line group includes a first segment, a second segment, and a twist segment conductively connected to the first segment and the second segment. The first segment includes a first portion of the first bit line and a ...