US Patent Issued to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Semiconductor device and manufacturing process for the same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,286, issued on Oct. 14, was assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING Co. LTD (Wuhan, China).

"Semiconductor device and manufacturing process for the same" was invented by Yajie Cheng (Wuhan, China) and Senhua Shi (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate, a gate oxide layer, and a polysilicon field plate. The semiconductor substrate includes a drift region and a well region. An end of the drift region is arranged with a drain region, and an end of the well region is arranged with a source region. The gate oxide layer is arranged on the semiconductor substrate a...