US Patent Issued to Wuhan Xinxin Semiconductor Manufacturing on June 3 for "Three dimensional semiconductor memory structure" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,445, issued on June 3, was assigned to Wuhan Xinxin Semiconductor Manufacturing Co. Ltd. (Hubei, China).

"Three dimensional semiconductor memory structure" was invented by Kaiwei Cao (Hubei, China), Peng Sun (Hubei, China), Jun Zhou (Hubei, China), Qiong Zhan (Hubei, China), Wei Huang (Hubei, China) and Chunyuan Hou (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structure, comprising a memory-array unit comprising: a substrate, a memory array disposed on the substrate, and a first bonding region disposed around the memory array. The memory array comprises multiple word lines, multiple bit lines, and multiple source lines. ...