US Patent Issued to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING on June 10 for "Semiconductor device and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,963, issued on June 10, was assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING Co. LTD. (Wuhan, China).

"Semiconductor device and manufacturing method therefor" was invented by Sheng Hu (Hubei, China) and Fan Yang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing the semiconductor device are disclosed. The method of manufacturing the semiconductor device includes: forming a trench fill structure in a pixel region of a substrate, where a high-k dielectric layer is sandwiched between a side wall of a fill material in the trench fill structure and the substrate; forming a plug structure ...