US Patent Issued to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Interconnection layer filled in through-silicon via (TSV) semiconductor device and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,770, issued on Jan. 27, was assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hubei, China).

"Interconnection layer filled in through-silicon via (TSV) semiconductor device and manufacturing method therefor" was invented by Tianjian Liu (Hubei, China), Rujin Zhou (Hubei, China) and Guoliang Ye (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method therefor are disclosed, in which a first opening is formed in a first metal layer by etching away part of the first metal layer, and a second metal layer is filled in the first opening and is electrically connected to the remainder of the...