US Patent Issued to WUHAN UNIVERSITY on Jan. 20 for "IGBT collector current online detection device and method based on gate current" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,529,723, issued on Jan. 20, was assigned to WUHAN UNIVERSITY (Hubei, China).

"IGBT collector current online detection device and method based on gate current" was invented by Meng Huang (Hubei, China), Zifan Li (Hubei, China), Yi Liu (Hubei, China) and Xiaoming Zha (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "This invention relates to the field of power electronics, specifically addressing an IGBT (Insulated Gate Bipolar Transistor) collector current online detection device and method based on gate current. The detection method involves processing the IGBT gate drive waveform using a Miller plateau detection module to extract the Miller ...