US Patent Issued to WUHAN TIANMA MICRO-ELECTRONICS on Sept. 30 for "Thin-film transistor substrate having first and second insulating films" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,978, issued on Sept. 30, was assigned to WUHAN TIANMA MICRO-ELECTRONICS Co. LTD. (Wuhan, China).

"Thin-film transistor substrate having first and second insulating films" was invented by Jun Tanaka (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first thin-film transistor includes a polysilicon film. A second thin-film transistor includes an oxide semiconductor film. A first insulating film is located upper than the polysilicon film and the oxide semiconductor film. The first insulating film is in contact with the oxide semiconductor film and covers at least a part of the polysilicon film and at least a part of the oxide semicondu...