US Patent Issued to WUHAN TIANMA MICRO-ELECTRONICS on Nov. 11 for "Thin-film transistor substrate with impurity concentration profile in layering direction having peak outside semiconductor layer" (Japanese, Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,319, issued on Nov. 11, was assigned to WUHAN TIANMA MICRO-ELECTRONICS Co. LTD. (Wuhan, China).

"Thin-film transistor substrate with impurity concentration profile in layering direction having peak outside semiconductor layer" was invented by Kazushige Takechi (Kanagawa, Japan), Kenji Sera (Kanagawa, Japan), Jun Tanaka (Kanagawa, Japan), Shui He (Xiamen, China) and FeiPeng Lin (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin-film transistor substrate includes an insulating substrate, a conductor layer including a top-gate electrode part of an oxide semiconductor thin-film transistor, an oxide semiconductor layer located lower tha...