US Patent Issued to Wuhan Tianma Micro-Electronics on March 11 for "Oxide semiconductor thin-film transistor and method of manufacturing oxide semiconductor thin-film transistor" (Japanese Inventor)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,652, issued on March 11, was assigned to Wuhan Tianma Micro-Electronics Co. Ltd. (Wuhnan, China).

"Oxide semiconductor thin-film transistor and method of manufacturing oxide semiconductor thin-film transistor" was invented by Kazushige Takechi (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an oxide semiconductor thin-film transistor, an oxide semiconductor part includes a channel region and a first and a second source/drain regions sandwiching the channel region. An insulator part made of a metal compound having a relative permittivity of not less than 8 is located between a gate electrode part and the oxide semiconductor part. ...