US Patent Issued to Wolfspeed on Sept. 23 for "Semiconductor devices having gate resistors with low variation in resistance values" (North Carolina Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,341, issued on Sept. 23, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Semiconductor devices having gate resistors with low variation in resistance values" was invented by Sei-Hyung Ryu (Cary, N.C.) and Thomas E. Harrington III (Durham, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Power semiconductor devices include a semiconductor layer structure comprising an active area with a plurality of unit cell transistors and an inactive gate pad area, a gate resistor layer on an upper side of the semiconductor layer structure, an inner contact that is directly on the upper side of the gate resistor layer, and an outer contact that is directly on ...