US Patent Issued to Wolfspeed on Sept. 23 for "Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof" (North Carolina Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,293, issued on Sept. 23, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof" was invented by Christer Hallin (Hillsborough, N.C.), Saptharishi Sriram (Cary, N.C.) and Jia Guo (Apex, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus configured to reduce lag includes a substrate; a group III-Nitride back barrier layer on the substrate; a group III-Nitride channel layer on the group III-Nitride back barrier layer; a group III-Nitride barrier layer on the group III-Nitride channel layer, the group III-Nitride barrier layer include a highe...