ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,103, issued on Oct. 7, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Transistor including a discontinuous barrier layer" was invented by Kyoung-Keun Lee (Cary, N.C.) and Jia Guo (Apex, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a first passivation layer on a semiconductor layer of the transistor between a source contact and a drain contact. The first passivation layer includes a portion having a topological change. The transistor further includes a discontinuous barrier layer on the portion of the first passivation layer having the topological change. The discontinuous barrier layer is configured to reduce ingress of ...