US Patent Issued to Wolfspeed on Oct. 7 for "Methods of forming ohmic contacts on semiconductor devices with trench/mesa structures" (North Carolina Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,664, issued on Oct. 7, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Methods of forming ohmic contacts on semiconductor devices with trench/mesa structures" was invented by Madankumar Sampath (Morrisville, N.C.), Sei-Hyung Ryu (Cary, N.C.) and Rahul R. Potera (Apex, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming ohmic contacts on a semiconductor structure having a p-type region and an n-type region includes depositing a first metal on the n-type region, annealing the structure at a first contact anneal temperature to form a first ohmic contact on the n-type region, depositing a second metal on the first ohmic contact and on...