ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,559, issued on May 27, was assigned to Wolfspeed Inc. (Durham, N.C.).
"Wide bandgap unipolar/bipolar transistor" was invented by Thomas E. Harrington III (Durham, N.C.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a semiconductor layer structure comprising a drift region of a first conductivity type, and first and second contacts on the semiconductor layer structure. The drift region comprises a wide bandgap semiconductor material, and is configured to provide unipolar conduction between the first and second contacts below a current density threshold, and bipolar conduction between the first and second contacts...