ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,319, issued on July 29, was assigned to WOLFSPEED INC. (Durham, N.C.).
"Support shield structures for trenched semiconductor devices" was invented by Woongsun Kim (Cary, N.C.), Daniel Jenner Lichtenwalner (Raleigh, N.C.), Naeem Islam (Morrisville, N.C.), Madankumar Sampath (Morrisville, N.C.) and Sei-Hyung Ryu (Cary, N.C.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a semiconductor layer structure comprising a drift region of a first conductivity type, and a gate trench extending into the drift region. The gate trench includes sidewalls and a bottom surface therebetween. A bottom shielding structure of a secon...