US Patent Issued to Wolfspeed on Aug. 26 for "Field effect transistor with selective channel layer doping" (North Carolina Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,348, issued on Aug. 26, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Field effect transistor with selective channel layer doping" was invented by Jia Guo (Apex, N.C.), Saptharishi Sriram (Cary, N.C.) and Scott Sheppard (Chapel Hill, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device according to some embodiments includes a channel layer, a barrier layer on the channel layer, and source and drain contacts on the barrier layer, and a gate contact on the barrier layer between the source and drain contacts. The channel layer includes a sub-layer having an increased doping concentration level relative to a remaining portion of the...