ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,346, issued on Aug. 26, was assigned to Wolfspeed Inc. (Durham, N.C.).
"Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof" was invented by Thomas J. Smith Jr. (Raleigh, N.C.) and Saptharishi Sriram (Cary, N.C.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus for reducing lag includes a substrate; a group III-Nitride barrier layer; a source electrically coupled to the group III-Nitride barrier layer; a gate on the group III-Nitride barrier layer; a drain electrically coupled to the group III-Nitride barrier layer; a p-region being arranged at or below the group III-Nitride barr...