ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,448, issued on April 15, was assigned to Wolfspeed Inc. (Durham, N.C.).
"Trench bottom shielding methods and approaches for trenched semiconductor device structures" was invented by Woongsun Kim (Cary, N.C.), Daniel J. Lichtenwalner (Raleigh, N.C.), Naeem Islam (Morrisville, N.C.) and Sei-Hyung Ryu (Cary, N.C.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming a semiconductor device that includes a polysilicon layer that may improve device reliability and/or a functioning of the device. An example device may include a wide band-gap semiconductor layer structure including a drift region that has a first conduct...