US Patent Issued to Wolfspeed on April 15 for "Power semiconductor devices including a trenched gate and methods of forming such devices" (North Carolina, Texas Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,284, issued on April 15, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Power semiconductor devices including a trenched gate and methods of forming such devices" was invented by Daniel Lichtenwalner (Raleigh, N.C.), Sei-Hyung Ryu (Cary, N.C.), Naeem Islam (Morrisville, N.C.), Woongsun Kim (Cary, N.C.), Matthew N. McCain (Raleigh, N.C.) and Joe McPherson (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming the devices are provided. Semiconductor devices include a semiconductor layer structure comprising a trench in an upper surface thereof, a dielectric layer in a lower portion of the trench, and ...