US Patent Issued to Wisconsin Alumni Research Foundation on Oct. 21 for "High-voltage bidirectional field effect transistor" (Wisconsin Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,878, issued on Oct. 21, was assigned to Wisconsin Alumni Research Foundation (Madison, Wis.).

"High-voltage bidirectional field effect transistor" was invented by Chirag Gupta (Madison, Wis.) and Shubhra S. Pasayat (Middleton, Wis.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bidirectional FET switch combining gate elements greatly reduces chip area and cost through the use of a dielectric layer with a high dielectric constant of a complex oxide moderating peak electrical gradients when used with or without field plates."

The patent was filed on Nov. 23, 2022, under Application No. 18/058,453.

*For further information, including images, charts...