ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,380,949, issued on Aug. 5, was assigned to WINDBOND ELECTRONICS CORP. (Taichung, Taiwan).
"Semiconductor memory device" was invented by Masaru Yano (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device has a NOR-type memory cell array, a crossbar array, an entry gate, and a column selecting/signal processing unit. The crossbar array has a plurality of rows and columns, variable resistor elements formed in intersections of rows and columns respectively. The entry gate arranged between the memory cell array and the crossbar array, connects a selected bit line of the memory cell array to the crossbar array based on a ...