ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,627, issued on Sept. 9, was assigned to Winbond Electronics Corp. (Taichung, Taiwan).
"Flash memory with high integration" was invented by Riichiro Shirota (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An AND-type flash memory capable of achieving high integration after providing a miniaturized memory cell size includes: a plurality of diffusion regions (70) formed in a substrate in a column direction, a plurality of gates (20) formed between the opposite diffusion regions (70), a selection control line (SGD), a selection control line (SGS), and a plurality of word lines (WL0 to WLn-1). The selection control line (SGD) is connecte...