US Patent Issued to Winbond Electronics on Sept. 30 for "Non-volatile memory structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,914, issued on Sept. 30, was assigned to Winbond Electronics Corp. (Taichung, Taiwan).

"Non-volatile memory structure and method for forming the same" was invented by Tzu-Yun Huang (Taichung, Taiwan) and Chun-Hsu Chen (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory structure includes a substrate and a gate stack layer over the substrate. The gate stack layer includes an active pattern and a rail block. The active pattern includes several first active stacks and several second active stacks. The first active stacks and the second active stacks are arranged separately in the first direction, and they extend in t...