ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,253, issued on Sept. 23, was assigned to WINBOND ELECTRONICS CORP. (Taichung, Taiwan).
"Dynamic random access memory structure and a method for forming the same" was invented by Hung-Yu Wei (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a substrate, an isolation feature, a word line and a doped region. The substrate has an active region. The isolation feature is disposed in the substrate to define the active region. The word line is buried in the substrate and extends across the active region and the isolation feature. The word line includes a first conduc...