US Patent Issued to Winbond Electronics on March 4 for "Flash memory device and program method thereof using leakage current compensation" (Taiwanese Inventor)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,596, issued on March 4, was assigned to Winbond Electronics Corp. (Taichung, Taiwan).

"Flash memory device and program method thereof using leakage current compensation" was invented by Wen-Chiao Ho (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A flash memory device includes a memory array, a first global bit line, and a sense amplifying device. The memory array includes a first memory block having a plurality of first memory cells. In a leakage current detection operation, the sense amplifying device detects a leakage current generated by the first memory cells on the first global bit line to obtain leakage current simulation inf...