ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,443, issued on June 17, was assigned to WINBOND ELECTRONICS CORP. (Taichung, Taiwan).

"Resistive random access memory and method for manufacturing the same" was invented by Chi-Ching Liu (Taichung, Taiwan), Chih-Chao Huang (Taichung, Taiwan) and Shih-Ning Tsai (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random access memory is provided. The resistive random access memory includes a conductive line structure and a memory unit. The conductive line structure is disposed in an array area and a periphery circuit area. The memory unit is disposed on the conductive line structure in the array area. The memory unit includes ...