ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,398, issued on July 29, was assigned to Winbond Electronics Corp. (Taichung, Taiwan).
"Forming operation of resistive memory device" was invented by I-Hsien Tseng (Taichung, Taiwan), Lung-Chi Cheng (Taichung, Taiwan), Ju-Chieh Cheng (Taichung, Taiwan), Jun-Yao Huang (Hsinchu, Taiwan) and Ping-Kun Wang (Changhua County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A forming operation of resistive memory device is provided. The operation includes: applying a pre-forming gate voltage and a pre-forming bit line voltage to a target memory cell; performing a dense switching forming operation, wherein the dense switching forming operation includes...