US Patent Issued to Winbond Electronics on Jan. 28 for "DRAM having isolation layer located between capacitor contact and the bit line structure for preventing short circuit" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,299, issued on Jan. 28, was assigned to Winbond Electronics Corp. (Taichung, Taiwan).

"DRAM having isolation layer located between capacitor contact and the bit line structure for preventing short circuit" was invented by Shu-Mei Lee (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A DRAM including following components is provided. A bit line stack structure includes a bit line structure and a hard mask layer. The bit line structure is located on the substrate. The hard mask layer is located on the bit line structure. A dielectric layer is located on the bit line stack structure and has an opening. A contact structure is located on t...