US Patent Issued to WINBOND ELECTRONICS on Jan. 13 for "Semiconductor device with floating gate, and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,037, issued on Jan. 13, was assigned to WINBOND ELECTRONICS CORP. (Taichung, Taiwan).

"Semiconductor device with floating gate, and method for manufacturing the same" was invented by Tzu-Yun Huang (Taichung, Taiwan) and Chung-Hsien Liu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a dielectric structure, a floating gate, and a control gate. The substrate has a protrusion, a first recess, and a second recess, wherein the first recess and the second recess are on opposite sides of the protrusion. The dielectric structure extends from the first recess and the second recess to above a to...