US Patent Issued to Winbond Electronics on Jan. 13 for "Dynamic random-access memory (DRAM) device, memory bank of DRAM device and method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,281, issued on Jan. 13, was assigned to Winbond Electronics Corp. (Taichung, Taiwan).

"Dynamic random-access memory (DRAM) device, memory bank of DRAM device and method thereof" was invented by Ki-Myung Kyung (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dynamic random-access memory (DRAM) device includes a first physical memory area corresponding to a first memory mat, a second physical memory area corresponding to a second memory mat, bit line pairs, switch pairs and sense amplifiers. The first and second physical memory areas include memory cells of the first memory bank and memory cells of the second memory bank being arranged...