ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,541,426, issued on Feb. 3, was assigned to Winbond Electronics Corp. (Taichung, Taiwan).
"Memory device with error correction code" was invented by Chuen-Der Lien (Los Altos Hills, Calif.), Chi-Shun Lin (Fremont, Calif.) and Ngatik Cheung (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a memory array, an ECC circuit, and a memory controller is provided. The memory array is configured to store a memory word. The memory word includes a data, at least one parity bit and a flag. The ECC circuit is configured to generate the at least one parity bit of the data, and detect and correct an error of the data read out fro...