ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,480, issued on Aug. 19, was assigned to Winbond Electronics Corp. (Taichung, Taiwan).
"Flash memory" was invented by Masaru Yano (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A flash memory capable of achieving high integration and low power consumption is formed by an AND-type memory cell array, an address buffer, a row selecting/driving circuit, a column selecting circuit, an input and output circuit, and a read/write control part. A memory cell includes, for example, a charge storage layer of an ONO structure. The read/write control part performs programming and erasing by Fowler-Nordheim (FN) tunneling between the charge storag...