ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,802, issued on June 10, was assigned to WIN SEMICONDUCTORS CORP. (Taoyuan, Taiwan).
"Semiconductor structure for die crack detection" was invented by Chu-Lung Huang (Taoyuan, Taiwan) and Pi-Hsia Wang (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A III-V semiconductor die for die crack detection is provided. The III-V semiconductor die includes a device area. The III-V semiconductor die further includes a doped semiconductor ring region. The doped semiconductor ring region surrounds the device area. At least one active device or at least one passive device is formed in the device area of the III-V semiconductor die."
The patent was...