US Patent Issued to William Marsh Rice University on Jan. 13 for "Charge-domain in-memory computing circuit" (Texas Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,524,207, issued on Jan. 13, was assigned to William Marsh Rice University (Houston).

"Charge-domain in-memory computing circuit" was invented by Kaiyuan Yang (Houston) and Zhiyu Chen (Houston).

According to the abstract* released by the U.S. Patent & Trademark Office: "A charge-domain IMC circuit is disclosed and includes: a cluster of 6T SRAM cells; a charge-domain MAC circuit; and an LBL connected to a bit-line of each of the 6T SRAM cells. The MAC circuit includes: a MOS transistor; an input switch; an output switch; an input port; an output port; and a capacitor. The LBL is connected to a gate of the MOS transistor. A first terminal of the MOS transistor is connected to a DC volt...