US Patent Issued to Western Digital Technologies on Jan. 13 for "BiSb topological insulator with seed layer or interlayer to prevent Sb diffusion and promote BiSb (012) orientation" (California Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,232, issued on Jan. 13, was assigned to Western Digital Technologies Inc. (San Jose, Calif.).

"BiSb topological insulator with seed layer or interlayer to prevent Sb diffusion and promote BiSb (012) orientation" was invented by Quang Le (San Jose, Calif.), Cherngye Hwang (San Jose, Calif.), Brian R. York (San Jose, Calif.), Andrew Chen (San Jose, Calif.), Thao A. Nguyen (San Jose, Calif.), Yongchul Ahn (San Jose, Calif.), Xiaoyong Liu (San Jose, Calif.), Hongquan Jiang (San Jose, Calif.), Zheng Gao (San Jose, Calif.) and Kuok San Ho (Emerald Hills, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A spin-orbit torque (SOT) magnetic tunnel juncti...