US Patent Issued to Wenzhou University on Sept. 9 for "Signal processing circuit for tunneling magnetoresistance sensor" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,411,188, issued on Sept. 9, was assigned to Wenzhou University (Zhejiang, China).

"Signal processing circuit for tunneling magnetoresistance sensor" was invented by Pengjun Wang (Zhejiang, China), Xiangyu Li (Zhejiang, China), Bo Chen (Zhejiang, China) and Hao Ye (Zhejiang, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A signal processing circuit for a tunneling magnetoresistance sensor comprises thirty-eight MOS transistors, two capacitors and ten switches. A first switch, a second switch, a third switch, a fourth switch, a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor form a high-frequency mo...