US Patent Issued to Wenzhou University on Aug. 26 for "PUF circuit based on threshold loss of MOSFETs" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,401,362, issued on Aug. 26, was assigned to Wenzhou University (Zhejiang, China).

"PUF circuit based on threshold loss of MOSFETs" was invented by Gang Li (Zhejiang, China), Pengjun Wang (Zhejiang, China), Xilong Shao (Zhejiang, China), Hui Li (Zhejiang, China) and Junjie Zhou (Zhejiang, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A PUF circuit based on the threshold loss of MOSFETs comprises N stages of delay units and an arbiter. Each stage of delay unit comprises six inverters and four MOS transistors, wherein the four MOS transistors are all PMOS transistors or NMOS transistors. Each path in each stage of delay unit uses only one PMOS or NM...